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  1 n-channel 100-v (d-s) mosfet features ? t re nchfet ? power mosfet ? 175 c junction temperature ? low thermal resistance package ? 100 % r g test ed applications ? i solated dc/dc converters produc t summa ry v (br)dss (v) r ds(on) ( )i d (a) 100 0.03 2 at v gs = 10 v 65 a n-channel mosfe t g d s notes: a. package limite d. b. duty cycle 1 % . c. s ee soa curve for voltage derating. d. when mount ed on 1" square pcb (fr-4 material). absolute maximum ratings t c = 25 c, unless otherwise noted pa rameter sym bol li mit uni t dr ain-source voltage v ds 100 v gate -source v oltage v gs 20 contin uous drain current (t j = 175 c ) t c = 25 c i d 65 a a t c = 125 c 37 a pulsed dra i n current i dm 140 a v alanche c urrent l = 0.1 mh i as 35 single pulse a v alanche energ y b e as 61 mj max i mum power dissipation b t c = 25 c p d 375 c w t a = 25 c d 3.75 oper ating junction and storage temperature range t j , t stg - 55 to 17 5 c thermal resist ance rat ings pa rameter sy mbol li mit unit junction-to-ambient pcb mount (to-263) d r thj a 40 c/ w j unction-to-case (drain) r thjc 0.4 rohs compliant t o-220ab t op vi e w gd s www.din-tek.jp dtl 9 826
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not subject to production testing. c. indep endent of ope rating temperature. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted pa ram e ter symb ol test conditions min. typ. max. un it static drain-source breakdown v oltage v ( br)dss v ds = 0 v, i d = 250 a 100 v gate-thres hold v oltage v gs(t h) v ds = v gs , i d = 250 a 24 gate-bo dy lea kage i gss v ds = 0 v, v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = 100 v , v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v , v gs = 0 v , t j = 175 c 25 0 on-state drain current a i d(on ) v ds t 5 v, v gs = 10 v 120 a drain-source on-state resistance a r ds(o n) v gs = 10 v, i d = 30 a 0.023 0.032 : v gs = 10 v, i d = 30 a, t j = 125 c 0.063 v gs = 10 v, i d = 30 a, t j = 175 c 0.084 f orward transconductance a g fs v ds = 15 v, i d = 30 a 25 s dynam i c b input capacita n ce c iss v gs = 0 v, v ds = 25 v, f = 1 mh z 5100 pf output c apacitance c oss 480 rev erse t ransfer capacitance c rss 210 to tal gate charge c q g v ds = 100 v , v gs = 10 v , i d = 65 a 90 130 nc gate-source charge c q gs 23 gate- drain charge c q gd 34 g ate resistance r g 0. 5 1.7 3.3 : tu r n - o n d e l ay t i m e c t d(on ) v dd = 100 v , r l = 1.5 : i d # 65 a, v gen = 10 v , r g = 2.5 : 24 3 5 ns rise time c t r 220 33 0 t urn-off delay time c t d(off) 45 7 0 fa ll time c t f 200 30 0 so urce-drain diode ratings and characteristics t c = 25 c b co ntinuous current i s 65 a pulse d current i sm 140 f orw ard voltage a v sd i f = 65 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/s 130 20 0 ns peak reverse recovery current i rm(rec) 812 a re verse recovery charge q rr 0.52 1.2 c zzzglqwhnms   '7/  
3 typica l c har acteristics 25 c, unless otherwise noted output charac teristic s transconductance capacitance 0 20 40 60 80 100 120 140 0 2468 1 0 v ds - dr ain-to-source voltage (v) v gs = 10 thru 7 v 4 v - drain current (a) i d 6 v 5 v 0 30 60 90 120 150 180 0 20 40 60 80 100 120 - t r ansconductance (s) g fs t c = - 55 c 25 c 125 c i d - drain current (a) 0 1000 2000 3000 4000 5000 6000 7000 0 25 50 75 100 125 150 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c os s c rss transfer ch aracteristics on -resistance vs. drain current gate charge 0 20 40 60 80 100 120 140 012 34 567 v gs - gate-to-source v oltage (v) - dr ain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.015 0.030 0.045 0.060 0 20 40 60 80 100 120 i d - dr ain current (a) v gs = 10 v - on-resistance ( ) r ds(on) 0 4 8 12 16 20 0 25 50 75 100 125 150 - gate-to-source v oltage (v) q g - t otal gate charge (nc) v gs v ds = 100 v i d = 65 a www.din-tek.jp dtl 9 826
4 ty pi cal ch aracteristics 25 c, unless otherwise noted on-res istan ce vs. junction temperature avalanche current vs. time r ds( on) - on-resistance (nor maliz ed) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - j unction temperature ( c) v gs = 10 v i d = 30 a t in (s) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i da v 0.01 i av (a) at t a = 150 c 100 1 0.0001 i av (a) at t a = 25 c source-d rain diode forward voltage drain source breakdown vs. junction temperature v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 180 190 200 210 220 230 240 - 50 - 25 0 25 50 75 100 125 150 175 t j - j unction temperature (c) (v) v (br)dss i d = 1.0 ma www.din-tek.jp dtl 9 826
5 thermal ratings maximu m avalanche and drain current vs. case temperature 0 15 30 45 60 75 0 25 50 75 100 125 150 175 t c - ambient t emper ature (c) - drain current (a) i d safe operating area v ds - dr ain-to-source voltage (v) * v gs minim um v gs at which r ds( on) is specified 1000 10 0.1 1 10 1000 0.1 100 t c = 25 c single pulse - dr ain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s 1 100 > r ds(on) limited* normalized t h ermal transient impedance, junction-to-case square wa v e pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normaliz ed ef f ective transient thermal impedance 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02 www.din-tek.jp dtl 9 826
1 to-220ab no te s * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inch es dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471 package information www.din-tek.jp
1 disclaimer all pro d uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp


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